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IEEE

On the Capacitance of Nanosheet Transistors

Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.
IEEE

Integral analysis of a magnetic field for an arbitrary geometry coil with rectangular cross section

Abstract: The integral method can effectively analyze magnetic fields, but the traditional integral method can analyze only coils with regular geometries. Therefore, a new integral method was ...
Goldseiten

Hercules Metals Completes IP Survey at Hook Target, Defining Large, Near-Surface Chargeability Anomaly

Seven Completed Survey Lines Highlight a 1.8-Kilometer Anomaly with Geometry and Intensity Comparable to the Leviathan Discovery Survey Completed: Approximately 28 line-kilometers of induced ...
Goldseiten

Exceptional assays show why high-grade core stands to super-charge early production profile at FireFly’s Green Bay

KEY POINTS Drilling returns more exceptional results which extend the high-grade core zone and confirm the strong continuity of the mineralisation Given the strength of the results, FireFly will ...